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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD640 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) *Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V (Max.)@ IC= 5A APPLICATIONS *High voltage switching applications. *High power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i MAX 600 400 5 7 2 100 UNIT V V .cn mi e V IC Collector Current-Continuous A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD640 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.0 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product Switching Times ton Turn-on Time w w scs .i w IE= 0; VCB= 50V; ftest= 1.0MHz IC= 0.5A; VCE= 10V .cn mi e 25 140 70 pF 3 MHz 1.0 s tstg Storage Time IB1= -IB2= 0.3A; VCC= 200V 3.0 s tf Fall Time 0.6 s isc Websitewww.iscsemi.cn |
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